Termination - dependent surface properties in the giant - Rashba semiconductors BiTe
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چکیده
Sebastian Fiedler,1 Thomas Bathon,2 Sergey V. Eremeev,3,4,5 Oleg E. Tereshchenko,5,6,7 Konstantin A. Kokh,5,7,8 Evgueni V. Chulkov,4,5,9,10 Paolo Sessi,2 Hendrik Bentmann,1,* Matthias Bode,2 and Friedrich Reinert1 1Experimentelle Physik VII and Röntgen Research Center for Complex Materials (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany 2Experimentelle Physik II and Röntgen Research Center for Complex Materials (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany 3Institute of Strength Physics and Materials Science, 634055 Tomsk, Russia 4Tomsk State University, 634050 Tomsk, Russia 5Saint Petersburg State University, 198504 Saint Petersburg, Russia 6Institute of Semiconductor Physics, 636090 Novosibirsk, Russia 7Novosibirsk State University, 636090 Novosibirsk, Russia 8Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk, Russia 9Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain 10Departamento de Fı́sica de Materiales and Centro Mixto CSIC-UPV/EHU, Facultad de Ciencias Quı́micas, Universidad del Pais Vasco/Euskal Herriko Unibertsitatea, Apartado 1072, 20080 San Sebastián/Donostia, Basque Country, Spain (Received 12 October 2015; published 15 December 2015)
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تاریخ انتشار 2015